Logo, Nor East Materials Inc. - Microelectronics Technology
(386) 478-0087
3459 Velona Avenue
New Smyrna Beach, FL 32168

Custom grown

Nor East Materials Inc. in New Smyrna Beach, Florida, offers MOCVD grown layers on GaAs and InP substrates for optoelectronic microelectronic and RF Microwave apllications. 

Diameters of GaAs & InP Wafers:

• 50 mm • 76 mm • 100 mm

Dopants:

• P-Dopants Zn and C • N dopants Si, Se, & Te

Optoelectronic & Microelectronic Applications:

• VCSELs
• Diodes
• Laser Diodes
• Microwave Devices 
• LEDs
• Photo Detectors
• Waveguides 
• HBTs
• HEMTs 
• FETs  

GaAs Compound Layers:

• GaAs • GaAlAs • GalnAs • GalnAlAs • GaAsN

InP Compound Layers:

• InP • InGaP • InGaAs • InGaAsP • InGaAlP

Continued Compound Layers:

• GaP, GaAsP • InAs, InSb • AlAs, InAlAs • GaAs on Si • GaN on Al203


Structure Types

We specialize in offering MOCVD grown InGaAs layers on InP substrates for photo diodes. Below are two generic structure types which parameters are easily change or an intermediary layer added for both Planar and Mesa type processing. These are as follows:


Type 1:

• Cap Layer - Thickness 1.0 µm, InP P+ Zn 1.5E19 cm^-3
• Absorption-Active Layer - 2.5 µm In.53Ga.47 As 8E14 cm^-3 Undoped
• Buffer Layer - 1.0 µm InP N- 2E15 cm^-3
• Substrate - 350 µm InP N+ 3E18 cm^-3 , <100> ± 2 deg off; Diameter 50.2 mm 

Type 2:

• Undoped Layer - InGaAs Thickness 0.5 µm
• Cap Layer - Thickness 0.5 µm, InP N > 5E18 cm^-3
• Absorption-Active Layer - 2.5 µm In.53Ga.47 As 8E14 cm^-3 Undoped
• Buffer Layer - 1.0 µm InP N- 2E15 cm^-3
• Substrate - 350 µm InP N+ 3E18 cm^-3, <100> ± 2 deg off; Diameter 50.2 mm 

Contact us in New Smyrna Beach, Florida, and ask us about our specialized wafers used in applied optoelectronics.