Nor East Materials

386-478-0087

3459 Velona Avenue

New Smyrna Beach, FL 32168


IIl - V MOCVD Wafers

A Proven Primary source

of Semiconductor wafers and Substrates

Custom grown

Nor East Materials Inc. in New Smyrna Beach, Florida, offers MOCVD grown layers on GaAs and InP substrates for optoelectronic microelectronic and RF Microwave apllications.

Diameters of GaAs & InP Wafers:
  • 50 mm
  • 76 mm
  • 100 mm
Dopants:
  • P-Dopants Zn and C
  • N dopants Si, Se, & Te
Float Zone Wafers

We provide float zone wafers and ingots according to your specifications. Our high-purity wafers carry very low concentrations of background impurities, such as carbon and oxygen with a High minority

Optoelectronic & Microelectronic Applications:
  • VCSELs
  • Diodes
  • Laser Diodes
  • Microwave Devices
  • LEDs
  • Photo Detectors
  • Waveguides
  • HBTs
  • HEMTs
  • FETs
Float Zone Wafer & NTD Specifications:
  • Diameters - 50 to 200 mm
  • Conductivity - N or P
  • Dopants - Phosphorous or Boron
  • Resistivity - 1.0 to 20,000 ohm cm
  • Orientation - <100> & <111>
  • Thickness - 150 to 1000 µm
  • Types - Polished, As-Cut, Lapped, Etched, & Others
  • Surfaces Conditions - Single- & Double-Sided Polish
GaAs Compound Layers:
  • GaAs
  • GaAlAs
  • GalnAs
  • GalnAlAs
  • GaAsN
InP Compound Layers:
  • InP
  • InGaP
  • InGaAs
  • InGaAsP
  • InGaAlP
Continued Compound Layers:
  • GaP, GaAsP
  • InAs, InSb
  • AlAs, InAlAs
  • GaAs on Si
  • GaN on Al203
Structure Types

We specialize in offering MOCVD grown InGaAs layers on InP substrates for photo diodes. Below are two generic structure types which parameters are easily change or an intermediary layer added for both Planar and Mesa type processing. These are as follows:

Type 1:
  • Cap Layer - Thickness 1.0 µm, InP P+ Zn 1.5E19 cm^-3
  • Absorption-Active Layer - 2.5 µm In.53Ga.47 As 8E14 cm^-3 Undoped
  • Buffer Layer - 1.0 µm InP N- 2E15 cm^-3
  • Substrate - 350 µm InP N+ 3E18 cm^-3 , <100> ± 2 deg off; Diameter 50.2 mm
Type 2:
  • Undoped Layer - InGaAs Thickness 0.5 µm
  • Cap Layer - Thickness 0.5 µm, InP N > 5E18 cm^-3
  • Absorption-Active Layer - 2.5 µm In.53Ga.47 As 8E14 cm^-3 Undoped
  • Buffer Layer - 1.0 µm InP N- 2E15 cm^-3
  • Substrate - 350 µm InP N+ 3E18 cm^-3, <100> ± 2 deg off; Diameter 50.2 mm
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