Float Zone Wafers and NTD:
Diameters: 50 mm - 150 mm
Conductivity: N or P
Dopants: Phosphorous or Boron
Resistivities: 0.1- 20,000 ohm cm
Orientation: <100> and <111>
Thickness: 50 um - 1000 um
Wafer types: Polished, As-Cut, Lapped, Etched + Others
Surfaces Conditions: Single and Double side polished
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High Purity silicon wafers and ingots with low concentration of background impurities such as carbon and oxygen. High resistivity with high minority carrier lifetimes are fundamental to silicon Float Zone materials. Whereas Nutron doping has the adverse effect by significantly lowering and thereby reducing the materials lifetime.
We offer both types! |
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