Silicon Wafer Types:
Prime, Test, Monitor,Re- Claim, As-Cut,Epitaxial Layers, CZ and FZ
Silicon Wafer Diameters:
- 3", 100 mm, 125 mm, 150 mm, 200 mm and 300 mm
- Orientation <100> and <111>
- Off orientations 2 - 4.5 +/-1 degree
-N type dopants (Phosphorus, Antimony and Arsenic)
-P type dopant ( Boron)
- Back seal: LTO, SiO2, Si-Poly, Acid Etched, Caustic Etched and Hard Back Side Damaged
- Single or double sided polished
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Silicon Epitaxial Wafers:
- Layer thickness 0.5 - >150 microns
- Epitaxial Layer (N/N+, N/P+, P/P+, P/N,etc.)
- Multiple layers are available
- Abrupt interface and Tailored doping profiles
- Intrinsic - undoped layers
-Buried layers - quick turn around
-Poly silicon layers 1.0 -650 microns
- Product evolution from research & development through commercialization
- All epi wafers and substrates are made up to each individual customer's specification and comes complete with the appropriate certificate of assurance and technical data. |
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