A Proven Primary source

of Semiconductor wafers and Substrates

We offer Si Epitaxy Services & Silicon Float zone & Silicon CZ wafers

Nor East Materials Inc. in New Smyrna Beach, Florida, offers silicon-based materials that is in demand in the semiconductor industry. We offfer a wide range of silicon wafers, including High Resistivity float zone and epitaxial wafers.

Silicon Wafer Types:
  • Prime
  • Test
  • Monitor
  • Re-Claim
  • As-Cut
  • Epitaxial Layers
  • CZ
  • FZ
Silicon CZ Wafer Specifications:
  • Diameter - 3 in, 100 mm, 125 mm, 150 mm, 200 mm, & 300 mm
  • Reistivity: .oo1- 50 ohm cm
  • P-Type dopant - Boron
  • Surface Conditions - Single- & Double-Sided Polish
  • Orientation - <100>, <111>, & <110>
  • N-Type Dopants - Phosphorus, Antimony, & Arsenic
  • Back Seal - LTO, SiO2, Si-Poly, Acid Etched, Caustic Etched & Hard Back Side-Damaged
Float Zone Wafers

We provide float zone wafers and ingots according to your specifications. Our high-purity wafers carry very low concentrations of background impurities, such as carbon and oxygen with a High minority

Gas Phased and NTD

We offer two kinds of float zone wafers: one with high resistivity with high minority carrier lifetimes, and another with Neutron doping, which significantly lowers the material's lifetime.

Float Zone Wafer & NTD Specifications:
  • Diameters - 50 to 200 mm
  • Conductivity - N or P
  • Dopants - Phosphorous or Boron
  • Resistivity - 1.0 to 20,000 ohm cm
  • Orientation - <100> & <111>
  • Thickness - 150 to 1000 µm
  • Types - Polished, As-Cut, Lapped, Etched, & Others
  • Surfaces Conditions - Single- & Double-Sided Polish
Epitaxial Wafers

All silicon epitaxial wafers and substrates are made to each individual customer's specifications. These come complete with the appropriate certificate of assurance and technical data. We offer epitaxial wafer product evolution from research and development, all the way through to commercialization.

Epitaxial Wafer Specifications:
  • Layer Thickness - 0.5 to Less Than 150 µm
  • Poly-Silicon Layers - 1.0 - 650 µm
  • Abrupt Interface & Tailored Doping Profiles
  • Buried Layers (Quick Turnaround)
  • Epitaxial Layer - N/N+, N/P+, P/P+, P/N, & Others
  • Multiple Layers
  • Intrinsic (Undoped Layers)